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1. Field of the Invention
The present invention relates to an interlayer insulating film formed in a semiconductor device, a method for forming the same, and a semiconductor device formed by the same. More particularly, the present invention relates to an interlayer insulating film to be used in a semiconductor device and a method for forming the same, and a semiconductor device formed by the same.
2. Description of the Related Art
There is proposed a method for forming a multi-layered wiring in a semiconductor device as follows.
At first, a wiring is formed on a semiconductor substrate to have a predetermined pattern. Then, a film having an interlayer insulating film thereon is formed on the entire surface of the semiconductor substrate. Subsequently, openings are formed in the interlayer insulating film to expose the wirings, respectively. The exposure of the wirings is then performed by using an etching resist as a mask. Further, the etching treatment is performed by using the exposure as a mask to form contact holes to expose the wirings, respectively.
For making more precise the exposure of the
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